Mosfet Schaltung. 500v drain source resistance rds is 0 85 ohms rise time and fall time is 23ns and 20ns available in to 220 package note. Mosfet symbol showing the integral reverse p n junction diode 4 5 a pulsed diode forward current a ism 18 body diode voltage vsd tj 25 c is 4 5 a vgs 0 v b 1 6v body diode reverse recovery time trr tj 25 c if 3 1 a di dt 100 a μs b 320 640 ns body diode reverse recovery charge qrr 1 0 2 0μc.
The gate electrode is electrically insulated from the main semiconductor by a thin layer of insulating material glass seriously. Features n channel power mosfet continuous drain current id. Mosfet is a voltage controlled field effect transistor that differs from a jfet.
500v drain source resistance rds is 0 85 ohms rise time and fall time is 23ns and 20ns available in to 220 package note.
Mosfet symbol showing the integral reverse p n junction diode 4 5 a pulsed diode forward current a ism 18 body diode voltage vsd tj 25 c is 4 5 a vgs 0 v b 1 6v body diode reverse recovery time trr tj 25 c if 3 1 a di dt 100 a μs b 320 640 ns body diode reverse recovery charge qrr 1 0 2 0μc. The metal oxide semiconductor field effect transistor mosfet mos fet or mos fet also known as the metal oxide silicon transistor mos transistor or mos is a type of insulated gate field effect transistor that is fabricated by the controlled oxidation of a semiconductor typically silicon the voltage of the covered gate determines the electrical conductivity of the device. This insulated metal gate is like a plate of a capacitor which has an extremely high input resistance as high as almost infinite. Mosfet symbol showing the integral reverse p n junction diode 4 5 a pulsed diode forward current a ism 18 body diode voltage vsd tj 25 c is 4 5 a vgs 0 v b 1 6v body diode reverse recovery time trr tj 25 c if 3 1 a di dt 100 a μs b 320 640 ns body diode reverse recovery charge qrr 1 0 2 0μc.
